{"id":291,"date":"2021-08-04T20:43:18","date_gmt":"2021-08-04T20:43:18","guid":{"rendered":"https:\/\/itgeeks.in\/home\/?p=291"},"modified":"2021-08-07T16:29:47","modified_gmt":"2021-08-07T16:29:47","slug":"2k6-ec-701-microelectronics-technology","status":"publish","type":"post","link":"https:\/\/itgeeks.in\/home\/?p=291","title":{"rendered":"2K6 EC 701: MICROELECTRONICS TECHNOLOGY"},"content":{"rendered":"\n<p><strong>Module 1 (12 hours)<\/strong><br>Crystal growth and wafer preparation: &#8211; Diffusion of impurities &#8211; Flick\u2019s I and II law of diffusion-Ion implantation. Oxidation &#8211; deal-grove method Optical lithography &#8211; Modulation transfer function. Photo resists &#8211; types. Chemical vapor deposition (CVD) &#8211; Epitaxial growth. Etching &#8211; wet plasma &amp; ion etching. Contacts &amp; Metallization: &#8211; Schottky contacts &amp; Implanted ohmic contacts.<br><strong>Module 2 (12 hours)<\/strong><br>MOS transistor: &#8211; Depletion &amp; Enhancement types &#8211; Threshold voltage-NMOS inverter &#8211; various pull-ups &#8211; CMOS &amp; BiCMOS inverter. Introduction to IC technology: &#8211; Bipolar technology &#8211; Early bipolar &amp; advanced bipolar processes. MOS technology: &#8211; NMOS, PMOS, CMOS, BiCMOS technologies, n well, p well, twin tub process. Hot carrier effects in BJT &amp; CMOSLatch up in CMOS<br><strong>Module 3 (15 hours)<\/strong><br>VLSI design fundamentals :- MOS layers-Stick diagrams &#8211; NMOS&amp; CMOS design styles &#8211; Layouts \u2013 lambda based design rules &#8211; 2 micro meter design rules &#8211; Diagrams for NMOS &amp; CMOS inverters &amp; gates &#8211; Simple Combinational Logic Design (half &amp; full adders, multiplexers ).<br><strong>Module 4 (13 hours)<\/strong><br>Device isolation: &#8211; Junction &amp; oxide isolation \u2013 LOCOS, SILO,SWAMI process &#8211; Trench isolation &#8211; Silicon on insulator isolation. Introduction to nanotransistors \u2013 Energy level diagram- Fermi function- ohms law in nanometer scaled devices-electron and spin transport- current in a one level model- potential profile-ballistic nanotransistors \u2013 nanotransistors with scattering.<\/p>\n\n\n\n<p><strong>Text Books<\/strong><br>1.\u00a0<a href=\"https:\/\/itgeeks.in\/home\/?p=292\">The Science &amp; Engineering of Microelectronics Fabrication: &#8211; Stephan A Campbell.<\/a><br>2.\u00a0Basic VLSI Design: &#8211; Douglas A Pucknell &amp; Kamran Eshraghian \u2013 PHI Third Edition, 2004<br>3. VLSI technology :- Sze S.M \u2013 MGH<br><strong>Reference Books<\/strong><br>1. Quantum Transport: Atom to Transistor: &#8211; S.Dutta \u2013 Cambridge University Press<br>2. <a href=\"https:\/\/itgeeks.in\/home\/?p=295\">Electronic Transport in Mesosiopic Systems: &#8211; S.Dutta \u2013 Cambridge University Press<\/a><br>3.\u00a0<a href=\"https:\/\/itgeeks.in\/home\/?p=298\">Solid-state Physics: &#8211; Aschroft and Meizmin<\/a><br>4.\u00a0<a href=\"https:\/\/itgeeks.in\/home\/?p=300\">Principle of CMOS VLSI Design:-Neil, H.E Weste &amp; Kamran Eshraghian &#8211; Pearson Education<\/a><br>5. Introduction to NMOS &amp; CMOS VLSI System Design :-Amar Mukhergee -PHI USA 1990<br>6. The Material Science of Microelectronics :- Klaus J Backmann \u2013 VCH publishers<br>7. Microelectronic Processing :- W Scott Ruska \u2013MGH<br>8.\u00a0CMOS \u2013 Circuit Design, Layout &amp; Simulation :- Jacob Baker R., Harry W Li &amp; David E Boyce \u2013 PHI<br>9. www. nanohub.org<br>10. Theory of ballistic transistors-IEEE Trans.Electron Dev.:-Rahman A.,Guo J.,Dutta S.and Landstorm M.(2003)<br><\/p>\n\n\n\n<div class=\"wp-block-buttons is-layout-flex wp-block-buttons-is-layout-flex\">\n<div class=\"wp-block-button\"><a class=\"wp-block-button__link\" href=\"https:\/\/itgeeks.in\/home\/?p=202\">S7 Question Papers<\/a><\/div>\n\n\n\n<div class=\"wp-block-button\"><a class=\"wp-block-button__link\" href=\"https:\/\/itgeeks.in\/home\/?p=281\">Notes<\/a><\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"<p>Module 1 (12 hours)Crystal growth and wafer preparation: &#8211; Diffusion of impurities &#8211; Flick\u2019s I and II law of diffusion-Ion<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[28,22,9,8],"tags":[7],"class_list":["post-291","post","type-post","status-publish","format-standard","hentry","category-ku-s7-ece","category-ku-syb-s7","category-ku-syllabus","category-syllabus","tag-kannur-university"],"_links":{"self":[{"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=\/wp\/v2\/posts\/291","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=291"}],"version-history":[{"count":2,"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=\/wp\/v2\/posts\/291\/revisions"}],"predecessor-version":[{"id":304,"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=\/wp\/v2\/posts\/291\/revisions\/304"}],"wp:attachment":[{"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=291"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=291"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/itgeeks.in\/home\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=291"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}