2K6AEI/ECE 304 : SOLID STATE DEVICES
Module I (13 hours)
Energy bands and charge carriers in semiconductors – Direct and indirect band gap semiconductors – Concept of effective mass – Intrinsic and extrinsic semiconductors – Fermi level – Electron and hole concentrations at equilibrium – Temperature dependence of carrier concentrations – Conductivity and mobility – Quasi Fermi level – Diffusion and drift of carriers – Einstein relation – Continuity equation
Module II (13 hours)
PN junctions – Contact potential – Space charge at a junction – Current flow at a junction – Carrier injection – Diode equation – Minority and majority carrier currents – Capacitance of pn junctions – Reverse bias breakdown – Zener and avalanche breakdown – Abrupt and graded junctions – Schottky barrier – Rectifying and ohmic contacts – Tunnel diode – Varactor diode – Zener diode
Module III (13 hours)
Charge transport in a bipolar junction transistor – Current and voltage amplification – Concept of load line – Analysis of transistor currents – Ebers-Moll model – Early effect – Concept of Early voltage – Avalanche breakdown in transistors – Transit time effects – Hetero junction GaAs BJTs
Module IV (13 hours)
Junction FET – Pinch off and saturation – Gate control – VI characteristics – MOS capacitor – Accumulation, depletion and strong inversion – threshold voltage – MOSFET – p channel and n channel MOSFETs – Depletion and Enhancement mode MOSFETs – Substrate bias effects – Floating gate MOSFETs – Short channel effects – hot carrier effect – MESFET- CMOS inverter-characteristics
Text books
1. Streetman B.G., Solid State Electronic Devices, Prentice Hall of India
2. Sze S.M., Physics of Semiconductor Devices, Wiley Eastern
3. Michael A.Shur, Physics of Semiconductor Devices, Prentice Hall of India
Reference books
1. Millman & Halkias, Integrated Electronics, McGraw Hill
2. Baker R.J., Li H.W. & Boyce D.E., CMOS – Circuit Design, Layout and Simulation, Prentice Hall of India
3. Kwok K N., Complete Guide to Semiconductor Devices, McGraw Hill
4. Yang E.S., Microelectronics Devices, McGraw Hill